AP30P02DF by A Power microelectronics – Specifications

A Power microelectronics AP30P02DF is a AP30P02DF from A Power microelectronics, part of the MOSFETs. It is designed for 20V 30A 16mΩ@4.5V,20A 24W 600mV@250uA 1PCSPChannel PDFN3333-8 MOSFETs ROHS. This product comes in a PDFN3333-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@4.5V,20A
  • Power Dissipation (Pd): 24W
  • Gate Threshold Voltage (Vgs(th)@Id): 600mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 231pF@10V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

More on AP30P02DF

Full Specifications of AP30P02DF

Model NumberAP30P02DF
Model NameA Power microelectronics AP30P02DF
CategoryMOSFETs
BrandA Power microelectronics
Description20V 30A 16mΩ@4.5V,20A 24W 600mV@250uA 1PCSPChannel PDFN3333-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CasePDFN3333-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)16mΩ@4.5V,20A
Power Dissipation (Pd)24W
Gate Threshold Voltage (Vgs(th)@Id)600mV@250uA
Reverse Transfer Capacitance (Crss@Vds)231pF@10V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP30P02DF With Other 200 Models

Related Models - AP30P02DF Alternative

Scroll to Top