AP30P03DF by A Power microelectronics – Specifications

A Power microelectronics AP30P03DF is a AP30P03DF from A Power microelectronics, part of the MOSFETs. It is designed for 30V 32A 15.5mΩ@10V,10A 29W 1.4V@250uA 1PCSPChannel PDFN3333-8 MOSFETs ROHS. This product comes in a PDFN3333-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 32A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15.5mΩ@10V,10A
  • Power Dissipation (Pd): 29W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 158pF@15V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.345nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

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Full Specifications of AP30P03DF

Model NumberAP30P03DF
Model NameA Power microelectronics AP30P03DF
CategoryMOSFETs
BrandA Power microelectronics
Description30V 32A 15.5mΩ@10V,10A 29W 1.4V@250uA 1PCSPChannel PDFN3333-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CasePDFN3333-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)32A
Drain Source On Resistance (RDS(on)@Vgs,Id)15.5mΩ@10V,10A
Power Dissipation (Pd)29W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds)158pF@15V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.345nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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