AP30P10D by A Power microelectronics – Specifications

A Power microelectronics AP30P10D is a AP30P10D from A Power microelectronics, part of the MOSFETs. It is designed for 100V 30A 54W 78mΩ@10V,10A 1.7V@250uA 1PCSPChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 54W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 78mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 76pF@20V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.029nF@20V
  • Total Gate Charge (Qg@Vgs): 44.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of AP30P10D

Model NumberAP30P10D
Model NameA Power microelectronics AP30P10D
CategoryMOSFETs
BrandA Power microelectronics
Description100V 30A 54W 78mΩ@10V,10A 1.7V@250uA 1PCSPChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)54W
Drain Source On Resistance (RDS(on)@Vgs,Id)78mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds)76pF@20V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.029nF@20V
Total Gate Charge (Qg@Vgs)44.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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