AP34N20P by A Power microelectronics – Specifications

A Power microelectronics AP34N20P is a AP34N20P from A Power microelectronics, part of the MOSFETs. It is designed for 200V 34A 60mΩ@10V,14A 158W 4V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS. This product comes in a TO-220-3L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 34A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,14A
  • Power Dissipation (Pd): 158W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 81pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.879nF@25V
  • Total Gate Charge (Qg@Vgs): 103nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.86 grams.

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Full Specifications of AP34N20P

Model NumberAP34N20P
Model NameA Power microelectronics AP34N20P
CategoryMOSFETs
BrandA Power microelectronics
Description200V 34A 60mΩ@10V,14A 158W 4V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.860 grams / 0.100884 oz
Package / CaseTO-220-3L
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)34A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@10V,14A
Power Dissipation (Pd)158W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)81pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.879nF@25V
Total Gate Charge (Qg@Vgs)103nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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