AP3N06MI by A Power microelectronics – Specifications

A Power microelectronics AP3N06MI is a AP3N06MI from A Power microelectronics, part of the MOSFETs. It is designed for 60V 3A 55mΩ@10V,5A 42W 2.5V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,5A
  • Power Dissipation (Pd): 42W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 7pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 695pF@15V
  • Total Gate Charge (Qg@Vgs): 5.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.

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Full Specifications of AP3N06MI

Model NumberAP3N06MI
Model NameA Power microelectronics AP3N06MI
CategoryMOSFETs
BrandA Power microelectronics
Description60V 3A 55mΩ@10V,5A 42W 2.5V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.160 grams / 0.005644 oz
Package / CaseSOT-23-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)3A
Drain Source On Resistance (RDS(on)@Vgs,Id)55mΩ@10V,5A
Power Dissipation (Pd)42W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)7pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)695pF@15V
Total Gate Charge (Qg@Vgs)5.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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