AP3P10MI by A Power microelectronics – Specifications

A Power microelectronics AP3P10MI is a AP3P10MI from A Power microelectronics, part of the MOSFETs. It is designed for 100V 3A 1.5W 260mΩ@10V,3A 1.9V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 1.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@10V,3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 35pF@15V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 550pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

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Full Specifications of AP3P10MI

Model NumberAP3P10MI
Model NameA Power microelectronics AP3P10MI
CategoryMOSFETs
BrandA Power microelectronics
Description100V 3A 1.5W 260mΩ@10V,3A 1.9V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CaseSOT-23-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)260mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)@Id)1.9V@250uA
Reverse Transfer Capacitance (Crss@Vds)35pF@15V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)550pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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