AP40P03DF by A Power microelectronics – Specifications

A Power microelectronics AP40P03DF is a AP40P03DF from A Power microelectronics, part of the MOSFETs. It is designed for 30V 40A 11mΩ@10V,10A 3.1W 1.5V@250uA 1PCSPChannel PDFN-8(3x3.1) MOSFETs ROHS. This product comes in a PDFN-8(3x3.1) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,10A
  • Power Dissipation (Pd): 3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 252pF@10V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.13pF@10V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

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Full Specifications of AP40P03DF

Model NumberAP40P03DF
Model NameA Power microelectronics AP40P03DF
CategoryMOSFETs
BrandA Power microelectronics
Description30V 40A 11mΩ@10V,10A 3.1W 1.5V@250uA 1PCSPChannel PDFN-8(3x3.1) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CasePDFN-8(3x3.1)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,10A
Power Dissipation (Pd)3.1W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)252pF@10V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.13pF@10V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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