AP4N65D by A Power microelectronics – Specifications

A Power microelectronics AP4N65D is a AP4N65D from A Power microelectronics, part of the MOSFETs. It is designed for 650V 4A 36W 2Ω@10V,2A 4V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4A
  • Power Dissipation (Pd): 36W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,2A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 10.9pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 580pF@25V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of AP4N65D

Model NumberAP4N65D
Model NameA Power microelectronics AP4N65D
CategoryMOSFETs
BrandA Power microelectronics
Description650V 4A 36W 2Ω@10V,2A 4V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)4A
Power Dissipation (Pd)36W
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)10.9pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)580pF@25V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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