AP50H06NF by A Power microelectronics – Specifications

A Power microelectronics AP50H06NF is a AP50H06NF from A Power microelectronics, part of the MOSFETs. It is designed for 60V 50A 11mΩ@10V,12A 3.6W 1.6V@250uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,12A
  • Power Dissipation (Pd): 3.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 97pF@15V
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 2.423nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

More on AP50H06NF

Full Specifications of AP50H06NF

Model NumberAP50H06NF
Model NameA Power microelectronics AP50H06NF
CategoryMOSFETs
BrandA Power microelectronics
Description60V 50A 11mΩ@10V,12A 3.6W 1.6V@250uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,12A
Power Dissipation (Pd)3.6W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)97pF@15V
Type2 N-Channel
Input Capacitance (Ciss@Vds)2.423nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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