AP50N03DF by A Power microelectronics – Specifications

A Power microelectronics AP50N03DF is a AP50N03DF from A Power microelectronics, part of the MOSFETs. It is designed for 30V 50A 26W 10.5mΩ@10V,6A 1.6V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS. This product comes in a PDFN-8L(3x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.5mΩ@10V,6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 87pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 870pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

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Full Specifications of AP50N03DF

Model NumberAP50N03DF
Model NameA Power microelectronics AP50N03DF
CategoryMOSFETs
BrandA Power microelectronics
Description30V 50A 26W 10.5mΩ@10V,6A 1.6V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CasePDFN-8L(3x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)26W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.5mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)87pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)870pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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