AP50N10D by A Power microelectronics – Specifications

A Power microelectronics AP50N10D is a AP50N10D from A Power microelectronics, part of the MOSFETs. It is designed for 100V 50A 85W 24mΩ@10V,20A 3V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 85W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 250pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2nF@25V
  • Total Gate Charge (Qg@Vgs): 39nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of AP50N10D

Model NumberAP50N10D
Model NameA Power microelectronics AP50N10D
CategoryMOSFETs
BrandA Power microelectronics
Description100V 50A 85W 24mΩ@10V,20A 3V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)85W
Drain Source On Resistance (RDS(on)@Vgs,Id)24mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)250pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2nF@25V
Total Gate Charge (Qg@Vgs)39nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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