AP5N06MI by A Power microelectronics – Specifications

A Power microelectronics AP5N06MI is a AP5N06MI from A Power microelectronics, part of the MOSFETs. It is designed for 60V 5.8A 1.5W 28mΩ@10V,4A 1.76V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 5.8A
  • Power Dissipation (Pd): 1.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@10V,4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.76V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 46pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.027nF@15V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

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Full Specifications of AP5N06MI

Model NumberAP5N06MI
Model NameA Power microelectronics AP5N06MI
CategoryMOSFETs
BrandA Power microelectronics
Description60V 5.8A 1.5W 28mΩ@10V,4A 1.76V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CaseSOT-23-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)5.8A
Power Dissipation (Pd)1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)28mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)1.76V@250uA
Reverse Transfer Capacitance (Crss@Vds)46pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.027nF@15V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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