AP5N10BI by A Power microelectronics – Specifications

A Power microelectronics AP5N10BI is a AP5N10BI from A Power microelectronics, part of the MOSFETs. It is designed for 100V 5A 3.1W 105mΩ@10V,4A 1.7V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 5A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 105mΩ@10V,4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 3.6pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 182pF@50V
  • Total Gate Charge (Qg@Vgs): 3.57nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.147 grams.

More on AP5N10BI

Full Specifications of AP5N10BI

Model NumberAP5N10BI
Model NameA Power microelectronics AP5N10BI
CategoryMOSFETs
BrandA Power microelectronics
Description100V 5A 3.1W 105mΩ@10V,4A 1.7V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.147 grams / 0.005185 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)5A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)105mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds)3.6pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)182pF@50V
Total Gate Charge (Qg@Vgs)3.57nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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