AP5N20D-H by A Power microelectronics – Specifications

A Power microelectronics AP5N20D-H is a AP5N20D-H from A Power microelectronics, part of the MOSFETs. It is designed for 200V 5A 530mΩ@10V,2.5A 46W 3.1V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 530mΩ@10V,2.5A
  • Power Dissipation (Pd): 46W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 17pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 228pF@25V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

More on AP5N20D-H

Full Specifications of AP5N20D-H

Model NumberAP5N20D-H
Model NameA Power microelectronics AP5N20D-H
CategoryMOSFETs
BrandA Power microelectronics
Description200V 5A 530mΩ@10V,2.5A 46W 3.1V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)5A
Drain Source On Resistance (RDS(on)@Vgs,Id)530mΩ@10V,2.5A
Power Dissipation (Pd)46W
Gate Threshold Voltage (Vgs(th)@Id)3.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)17pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)228pF@25V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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