AP5N30D by A Power microelectronics – Specifications

A Power microelectronics AP5N30D is a AP5N30D from A Power microelectronics, part of the MOSFETs. It is designed for 300V 5A 58.7W 1.2Ω@10V,2.5A 3.2V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 300V
  • Continuous Drain Current (Id): 5A
  • Power Dissipation (Pd): 58.7W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,2.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 7pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 291pF@25V
  • Total Gate Charge (Qg@Vgs): 8.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

More on AP5N30D

Full Specifications of AP5N30D

Model NumberAP5N30D
Model NameA Power microelectronics AP5N30D
CategoryMOSFETs
BrandA Power microelectronics
Description300V 5A 58.7W 1.2Ω@10V,2.5A 3.2V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)300V
Continuous Drain Current (Id)5A
Power Dissipation (Pd)58.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)@Id)3.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)7pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)291pF@25V
Total Gate Charge (Qg@Vgs)8.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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