AP60N02BD by A Power microelectronics – Specifications

A Power microelectronics AP60N02BD is a AP60N02BD from A Power microelectronics, part of the MOSFETs. It is designed for 20V 60A 37W 4.8mΩ@4.5V,30A 700mV@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 60A
  • Power Dissipation (Pd): 37W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@4.5V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 271pF@10V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.832nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of AP60N02BD

Model NumberAP60N02BD
Model NameA Power microelectronics AP60N02BD
CategoryMOSFETs
BrandA Power microelectronics
Description20V 60A 37W 4.8mΩ@4.5V,30A 700mV@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)60A
Power Dissipation (Pd)37W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)@Id)700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)271pF@10V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.832nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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