AP60N03DF by A Power microelectronics – Specifications

A Power microelectronics AP60N03DF is a AP60N03DF from A Power microelectronics, part of the MOSFETs. It is designed for 30V 60A 7mΩ@10V,12A 29W 2.5V@250uA 1PCSNChannel PDFN3333-8 MOSFETs ROHS. This product comes in a PDFN3333-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,12A
  • Power Dissipation (Pd): 29W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 131pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.317nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

More on AP60N03DF

Full Specifications of AP60N03DF

Model NumberAP60N03DF
Model NameA Power microelectronics AP60N03DF
CategoryMOSFETs
BrandA Power microelectronics
Description30V 60A 7mΩ@10V,12A 29W 2.5V@250uA 1PCSNChannel PDFN3333-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CasePDFN3333-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@10V,12A
Power Dissipation (Pd)29W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)131pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.317nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP60N03DF With Other 186 Models

Related Models - AP60N03DF Alternative

Scroll to Top