AP60N04DF by A Power microelectronics – Specifications

A Power microelectronics AP60N04DF is a AP60N04DF from A Power microelectronics, part of the MOSFETs. It is designed for 40V 60A 12.5mΩ@10V,20A 34.7W 1.5V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS. This product comes in a PDFN-8L(3x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.5mΩ@10V,20A
  • Power Dissipation (Pd): 34.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 88pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.314nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on AP60N04DF

Full Specifications of AP60N04DF

Model NumberAP60N04DF
Model NameA Power microelectronics AP60N04DF
CategoryMOSFETs
BrandA Power microelectronics
Description40V 60A 12.5mΩ@10V,20A 34.7W 1.5V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CasePDFN-8L(3x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)12.5mΩ@10V,20A
Power Dissipation (Pd)34.7W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)88pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.314nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP60N04DF With Other 55 Models

Related Models - AP60N04DF Alternative

Scroll to Top