AP6N03SI by A Power microelectronics – Specifications

A Power microelectronics AP6N03SI is a AP6N03SI from A Power microelectronics, part of the MOSFETs. It is designed for 30V 6A 29mΩ@4.5V,5A 1.5W 900mV@250uA 1PCSNChannel SOT-89-3L MOSFETs ROHS. This product comes in a SOT-89-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@4.5V,5A
  • Power Dissipation (Pd): 1.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 65pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 572pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.21 grams.

More on AP6N03SI

Full Specifications of AP6N03SI

Model NumberAP6N03SI
Model NameA Power microelectronics AP6N03SI
CategoryMOSFETs
BrandA Power microelectronics
Description30V 6A 29mΩ@4.5V,5A 1.5W 900mV@250uA 1PCSNChannel SOT-89-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.210 grams / 0.007408 oz
Package / CaseSOT-89-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)29mΩ@4.5V,5A
Power Dissipation (Pd)1.5W
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Reverse Transfer Capacitance (Crss@Vds)65pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)572pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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