AP80N02NF by A Power microelectronics – Specifications

A Power microelectronics AP80N02NF is a AP80N02NF from A Power microelectronics, part of the MOSFETs. It is designed for 20V 80A 81W 2.8mΩ@4.5V,30A 650mV@250uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS. This product comes in a DFN-5(5.1x6.1) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 81W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@4.5V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 650mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 446pF@10V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.2nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.171 grams.

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Full Specifications of AP80N02NF

Model NumberAP80N02NF
Model NameA Power microelectronics AP80N02NF
CategoryMOSFETs
BrandA Power microelectronics
Description20V 80A 81W 2.8mΩ@4.5V,30A 650mV@250uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.171 grams / 0.006032 oz
Package / CaseDFN-5(5.1x6.1)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)81W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)@Id)650mV@250uA
Reverse Transfer Capacitance (Crss@Vds)446pF@10V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.2nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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