AP80N03D by A Power microelectronics – Specifications

A Power microelectronics AP80N03D is a AP80N03D from A Power microelectronics, part of the MOSFETs. It is designed for 30V 80A 54W 4.8mΩ@10V,20A 1.6V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 54W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 180pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.16nF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

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Full Specifications of AP80N03D

Model NumberAP80N03D
Model NameA Power microelectronics AP80N03D
CategoryMOSFETs
BrandA Power microelectronics
Description30V 80A 54W 4.8mΩ@10V,20A 1.6V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)54W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)180pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.16nF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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