AP80N08D by A Power microelectronics – Specifications

A Power microelectronics AP80N08D is a AP80N08D from A Power microelectronics, part of the MOSFETs. It is designed for 80V 80A 4.8mΩ@10V,20A 56W 2.5V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,20A
  • Power Dissipation (Pd): 56W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 38pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.86nF@40V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.47 grams.

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Full Specifications of AP80N08D

Model NumberAP80N08D
Model NameA Power microelectronics AP80N08D
CategoryMOSFETs
BrandA Power microelectronics
Description80V 80A 4.8mΩ@10V,20A 56W 2.5V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.470 grams / 0.016579 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,20A
Power Dissipation (Pd)56W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)38pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.86nF@40V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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