AP85N04NF by A Power microelectronics – Specifications

A Power microelectronics AP85N04NF is a AP85N04NF from A Power microelectronics, part of the MOSFETs. It is designed for 40V 85A 4.5mΩ@10V,10A 52.1W 2.5V@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS. This product comes in a PDFN-8(5x5.8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 85A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,10A
  • Power Dissipation (Pd): 52.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 175pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.354nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

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Full Specifications of AP85N04NF

Model NumberAP85N04NF
Model NameA Power microelectronics AP85N04NF
CategoryMOSFETs
BrandA Power microelectronics
Description40V 85A 4.5mΩ@10V,10A 52.1W 2.5V@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CasePDFN-8(5x5.8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)85A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@10V,10A
Power Dissipation (Pd)52.1W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)175pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.354nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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