AP8814A by A Power microelectronics – Specifications

A Power microelectronics AP8814A is a AP8814A from A Power microelectronics, part of the MOSFETs. It is designed for 20V 8A 14mΩ@4.5V,4A 1.25W 800mV@250uA 2 N-Channel SOT-23-6L MOSFETs ROHS. This product comes in a SOT-23-6L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Configuration: Common Drain
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@4.5V,4A
  • Power Dissipation (Pd): 1.25W
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 125pF@8V
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 800pF@8V
  • Total Gate Charge (Qg@Vgs): 11nC@4V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

More on AP8814A

Full Specifications of AP8814A

Model NumberAP8814A
Model NameA Power microelectronics AP8814A
CategoryMOSFETs
BrandA Power microelectronics
Description20V 8A 14mΩ@4.5V,4A 1.25W 800mV@250uA 2 N-Channel SOT-23-6L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CaseSOT-23-6L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
ConfigurationCommon Drain
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)14mΩ@4.5V,4A
Power Dissipation (Pd)1.25W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Reverse Transfer Capacitance (Crss@Vds)125pF@8V
Type2 N-Channel
Input Capacitance (Ciss@Vds)800pF@8V
Total Gate Charge (Qg@Vgs)11nC@4V
Operating Temperature-55℃~+150℃@(Tj)

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