AP8N06SI by A Power microelectronics – Specifications

A Power microelectronics AP8N06SI is a AP8N06SI from A Power microelectronics, part of the MOSFETs. It is designed for 60V 8.5A 1.2W 28mΩ@10V,10A 1.6V@250uA 1PCSNChannel SOT-89-3 MOSFETs ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8.5A
  • Power Dissipation (Pd): 1.2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 49.4pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.148nF@25V
  • Total Gate Charge (Qg@Vgs): 20.3nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.21 grams.

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Full Specifications of AP8N06SI

Model NumberAP8N06SI
Model NameA Power microelectronics AP8N06SI
CategoryMOSFETs
BrandA Power microelectronics
Description60V 8.5A 1.2W 28mΩ@10V,10A 1.6V@250uA 1PCSNChannel SOT-89-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.210 grams / 0.007408 oz
Package / CaseSOT-89-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)8.5A
Power Dissipation (Pd)1.2W
Drain Source On Resistance (RDS(on)@Vgs,Id)28mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)49.4pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.148nF@25V
Total Gate Charge (Qg@Vgs)20.3nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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