AP90N02NF by A Power microelectronics – Specifications

A Power microelectronics AP90N02NF is a AP90N02NF from A Power microelectronics, part of the MOSFETs. It is designed for 20V 90A 1.6mΩ@10V,20A 83W 680mV@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS. This product comes in a PDFN-8(5x5.8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 90A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@10V,20A
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 680mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 321pF@10V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.307nF@10V
  • Total Gate Charge (Qg@Vgs): 77nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

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Full Specifications of AP90N02NF

Model NumberAP90N02NF
Model NameA Power microelectronics AP90N02NF
CategoryMOSFETs
BrandA Power microelectronics
Description20V 90A 1.6mΩ@10V,20A 83W 680mV@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CasePDFN-8(5x5.8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)90A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.6mΩ@10V,20A
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)680mV@250uA
Reverse Transfer Capacitance (Crss@Vds)321pF@10V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.307nF@10V
Total Gate Charge (Qg@Vgs)77nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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