AP90N06P by A Power microelectronics – Specifications

A Power microelectronics AP90N06P is a AP90N06P from A Power microelectronics, part of the MOSFETs. It is designed for 60V 90A 5.8mΩ@10V,30A 108W 3V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS. This product comes in a TO-220-3L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 90A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.8mΩ@10V,30A
  • Power Dissipation (Pd): 108W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 257pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.136nF@30V
  • Total Gate Charge (Qg@Vgs): 90nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.7 grams.

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Full Specifications of AP90N06P

Model NumberAP90N06P
Model NameA Power microelectronics AP90N06P
CategoryMOSFETs
BrandA Power microelectronics
Description60V 90A 5.8mΩ@10V,30A 108W 3V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.700 grams / 0.09524 oz
Package / CaseTO-220-3L
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)90A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.8mΩ@10V,30A
Power Dissipation (Pd)108W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)257pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.136nF@30V
Total Gate Charge (Qg@Vgs)90nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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