AP9N20D by A Power microelectronics – Specifications

A Power microelectronics AP9N20D is a AP9N20D from A Power microelectronics, part of the MOSFETs. It is designed for 200V 9A 230mΩ@10V,4.5A 74W 1.6V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@10V,4.5A
  • Power Dissipation (Pd): 74W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 37pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 684pF@25V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

More on AP9N20D

Full Specifications of AP9N20D

Model NumberAP9N20D
Model NameA Power microelectronics AP9N20D
CategoryMOSFETs
BrandA Power microelectronics
Description200V 9A 230mΩ@10V,4.5A 74W 1.6V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)230mΩ@10V,4.5A
Power Dissipation (Pd)74W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)37pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)684pF@25V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP9N20D With Other 156 Models

Related Models - AP9N20D Alternative

Scroll to Top