APG110N10NF by A Power microelectronics – Specifications

A Power microelectronics APG110N10NF is a APG110N10NF from A Power microelectronics, part of the MOSFETs. It is designed for 100V 110A 113.6W 4.2mΩ@10V,20A 1.8V@250uA 1PCSNChannel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 110A
  • Power Dissipation (Pd): 113.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 20pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.4nF@50V
  • Total Gate Charge (Qg@Vgs): 75nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.26 grams.

More on APG110N10NF

Full Specifications of APG110N10NF

Model NumberAPG110N10NF
Model NameA Power microelectronics APG110N10NF
CategoryMOSFETs
BrandA Power microelectronics
Description100V 110A 113.6W 4.2mΩ@10V,20A 1.8V@250uA 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.260 grams / 0.009171 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)110A
Power Dissipation (Pd)113.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)20pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.4nF@50V
Total Gate Charge (Qg@Vgs)75nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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