APG60N10D by A Power microelectronics – Specifications

A Power microelectronics APG60N10D is a APG60N10D from A Power microelectronics, part of the MOSFETs. It is designed for 100V 60A 8mΩ@10V,10A 125W 2.5V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,10A
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 6.5pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.604nF@50V
  • Total Gate Charge (Qg@Vgs): 49.9nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on APG60N10D

Full Specifications of APG60N10D

Model NumberAPG60N10D
Model NameA Power microelectronics APG60N10D
CategoryMOSFETs
BrandA Power microelectronics
Description100V 60A 8mΩ@10V,10A 125W 2.5V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V,10A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)6.5pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.604nF@50V
Total Gate Charge (Qg@Vgs)49.9nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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