APJ14N65D by A Power microelectronics – Specifications

A Power microelectronics APJ14N65D is a APJ14N65D from A Power microelectronics, part of the MOSFETs. It is designed for 650V 8A 25.5W 560mΩ@10V,3.2A 3.3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 8A
  • Power Dissipation (Pd): 25.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 560mΩ@10V,3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 1.32pF@100V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 438pF@100V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.48 grams.

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Full Specifications of APJ14N65D

Model NumberAPJ14N65D
Model NameA Power microelectronics APJ14N65D
CategoryMOSFETs
BrandA Power microelectronics
Description650V 8A 25.5W 560mΩ@10V,3.2A 3.3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.480 grams / 0.016932 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)8A
Power Dissipation (Pd)25.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)560mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)@Id)3.3V@250uA
Reverse Transfer Capacitance (Crss@Vds)1.32pF@100V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)438pF@100V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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