AGM-Semi AGM056N10H is a AGM056N10H from AGM-Semi, part of the MOSFETs. It is designed for 100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 140A
- Power Dissipation (Pd): 227W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.1mΩ@10V,40A
- Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): 56nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.686 grams.
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Full Specifications of AGM056N10H
| Model Number | AGM056N10H |
| Model Name | AGM-Semi AGM056N10H |
| Category | MOSFETs |
| Brand | AGM-Semi |
| Description | 100V 140A 227W 5.1mΩ@10V,40A 2.8V@250uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.686 grams / 0.059472 oz |
| Package / Case | TO-263 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 140A |
| Power Dissipation (Pd) | 227W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.1mΩ@10V,40A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.8V@250uA |
| Type | 1PCSNChannel |
| Total Gate Charge (Qg@Vgs) | 56nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |