AGM-Semi AGM406MBQ is a AGM406MBQ from AGM-Semi, part of the MOSFETs. It is designed for 40V 25A 7.8mΩ@10V,10A 2W 1.7V@250uA 2 N-Channel WQFN3x3 MOSFETs ROHS. This product comes in a WQFN3x3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.8mΩ@10V,10A
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 870pF@20V
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.059 grams.
More on AGM406MBQ
Full Specifications of AGM406MBQ
Model Number | AGM406MBQ |
Model Name | AGM-Semi AGM406MBQ |
Category | MOSFETs |
Brand | AGM-Semi |
Description | 40V 25A 7.8mΩ@10V,10A 2W 1.7V@250uA 2 N-Channel WQFN3x3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.059 grams / 0.002081 oz |
Package / Case | WQFN3x3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.8mΩ@10V,10A |
Power Dissipation (Pd) | 2W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.7V@250uA |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 870pF@20V |
Total Gate Charge (Qg@Vgs) | 13nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |