AGM-Semi AGM603D is a AGM603D from AGM-Semi, part of the MOSFETs. It is designed for 60V 130A 140W 2.8mΩ@10V,10A 1.6V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 130A
- Power Dissipation (Pd): 140W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,10A
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): 66nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.
More on AGM603D
Full Specifications of AGM603D
| Model Number | AGM603D |
| Model Name | AGM-Semi AGM603D |
| Category | MOSFETs |
| Brand | AGM-Semi |
| Description | 60V 130A 140W 2.8mΩ@10V,10A 1.6V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.370 grams / 0.013051 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 130A |
| Power Dissipation (Pd) | 140W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.8mΩ@10V,10A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Type | 1PCSNChannel |
| Total Gate Charge (Qg@Vgs) | 66nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |