AGM605C by AGM-Semi – Specifications

AGM-Semi AGM605C is a AGM605C from AGM-Semi, part of the MOSFETs. It is designed for 60V 80A 25W 4.5mΩ@10V,20A 1.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 25W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 44.5nC@0V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.7 grams.

Full Specifications of AGM605C

Model NumberAGM605C
Model NameAGM-Semi AGM605C
CategoryMOSFETs
BrandAGM-Semi
Description60V 80A 25W 4.5mΩ@10V,20A 1.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.700 grams / 0.09524 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)25W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)44.5nC@0V
Operating Temperature-55℃~+150℃@(Tj)

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