Alpha & Omega Semicon AOI11S60 is a AOI11S60 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 600V 11A 399mΩ@3.8A,10V 208W 4.1V@250uA 1PCSNChannel TO-251A MOSFETs ROHS. This product comes in a TO-251A package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 399mΩ@3.8A,10V
- Power Dissipation (Pd): 208W
- Gate Threshold Voltage (Vgs(th)@Id): 4.1V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 545pF@100V
- Total Gate Charge (Qg@Vgs): 11nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AOI11S60
Full Specifications of AOI11S60
Model Number | AOI11S60 |
Model Name | Alpha & Omega Semicon AOI11S60 |
Category | MOSFETs |
Brand | Alpha & Omega Semicon |
Description | 600V 11A 399mΩ@3.8A,10V 208W 4.1V@250uA 1PCSNChannel TO-251A MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-251A |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 11A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 399mΩ@3.8A,10V |
Power Dissipation (Pd) | 208W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.1V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 545pF@100V |
Total Gate Charge (Qg@Vgs) | 11nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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