Alpha & Omega Semicon AONR32320C is a AONR32320C from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 30V 21mΩ@9.5A,10V 2.3V@250uA 1PCSNChannel DFN-8-EP(3x3) MOSFETs ROHS. This product comes in a DFN-8-EP(3x3) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 9.5A;12A
- Power Dissipation (Pd): 3.1W;11W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@9.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 650pF@15V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AONR32320C
Full Specifications of AONR32320C
Model Number | AONR32320C |
Model Name | Alpha & Omega Semicon AONR32320C |
Category | MOSFETs |
Brand | Alpha & Omega Semicon |
Description | 30V 21mΩ@9.5A,10V 2.3V@250uA 1PCSNChannel DFN-8-EP(3x3) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | DFN-8-EP(3x3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 9.5A;12A |
Power Dissipation (Pd) | 3.1W;11W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@9.5A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 650pF@15V |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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