AONS660A70F by Alpha & Omega Semicon – Specifications

Alpha & Omega Semicon AONS660A70F is a AONS660A70F from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 700V 660mΩ@2.5A,10V 4V@250uA 1PCSNChannel DFN-8-EP(5x6) MOSFETs ROHS. This product comes in a DFN-8-EP(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 1.7A;9.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 660mΩ@2.5A,10V
  • Power Dissipation (Pd): 4.1W;138W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 900pF@100V
  • Total Gate Charge (Qg@Vgs): 14.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of AONS660A70F

Model NumberAONS660A70F
Model NameAlpha & Omega Semicon AONS660A70F
CategoryMOSFETs
BrandAlpha & Omega Semicon
Description700V 660mΩ@2.5A,10V 4V@250uA 1PCSNChannel DFN-8-EP(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-8-EP(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)700V
Continuous Drain Current (Id)1.7A;9.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)660mΩ@2.5A,10V
Power Dissipation (Pd)4.1W;138W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)900pF@100V
Total Gate Charge (Qg@Vgs)14.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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