Alpha & Omega Semicon AOT11S65L is a AOT11S65L from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 650V 11A 399mΩ@5.5A,10V 198W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 399mΩ@5.5A,10V
- Power Dissipation (Pd): 198W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 646pF@100V
- Total Gate Charge (Qg@Vgs): 13.2nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AOT11S65L
Full Specifications of AOT11S65L
Model Number | AOT11S65L |
Model Name | Alpha & Omega Semicon AOT11S65L |
Category | MOSFETs |
Brand | Alpha & Omega Semicon |
Description | 650V 11A 399mΩ@5.5A,10V 198W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 11A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 399mΩ@5.5A,10V |
Power Dissipation (Pd) | 198W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 646pF@100V |
Total Gate Charge (Qg@Vgs) | 13.2nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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