AOT1N60 by Alpha & Omega Semicon – Specifications

Alpha & Omega Semicon AOT1N60 is a AOT1N60 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 600V 1.3A 9Ω@650mA,10V 41.7W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 1.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9Ω@650mA,10V
  • Power Dissipation (Pd): 41.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 160pF@25V
  • Total Gate Charge (Qg@Vgs): 8nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AOT1N60

Full Specifications of AOT1N60

Model NumberAOT1N60
Model NameAlpha & Omega Semicon AOT1N60
CategoryMOSFETs
BrandAlpha & Omega Semicon
Description600V 1.3A 9Ω@650mA,10V 41.7W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)1.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)9Ω@650mA,10V
Power Dissipation (Pd)41.7W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)160pF@25V
Total Gate Charge (Qg@Vgs)8nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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