Alpha & Omega Semicon AOT3N100 is a AOT3N100 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 1kV 2.8A 6Ω@1.5A,10V 132W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 1kV
- Continuous Drain Current (Id): 2.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6Ω@1.5A,10V
- Power Dissipation (Pd): 132W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 830pF@25V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AOT3N100
Full Specifications of AOT3N100
Model Number | AOT3N100 |
Model Name | Alpha & Omega Semicon AOT3N100 |
Category | MOSFETs |
Brand | Alpha & Omega Semicon |
Description | 1kV 2.8A 6Ω@1.5A,10V 132W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 1kV |
Continuous Drain Current (Id) | 2.8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6Ω@1.5A,10V |
Power Dissipation (Pd) | 132W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 830pF@25V |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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