Alpha & Omega Semicon AOU3N60 is a AOU3N60 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 600V 2.5A 3.5Ω@1.25A,10V 56.8W 4.5V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 2.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5Ω@1.25A,10V
- Power Dissipation (Pd): 56.8W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 370pF@25V
- Total Gate Charge (Qg@Vgs): 12nC@10V
- Operating Temperature: -50℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on AOU3N60
Full Specifications of AOU3N60
Model Number | AOU3N60 |
Model Name | Alpha & Omega Semicon AOU3N60 |
Category | MOSFETs |
Brand | Alpha & Omega Semicon |
Description | 600V 2.5A 3.5Ω@1.25A,10V 56.8W 4.5V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-251-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 2.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5Ω@1.25A,10V |
Power Dissipation (Pd) | 56.8W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 370pF@25V |
Total Gate Charge (Qg@Vgs) | 12nC@10V |
Operating Temperature | -50℃~+150℃@(Tj) |
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