AOU4S60 by Alpha & Omega Semicon – Specifications

Alpha & Omega Semicon AOU4S60 is a AOU4S60 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 600V 4A 56.8W 900mΩ@2A,10V 4.1V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4A
  • Power Dissipation (Pd): 56.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 263pF@100V
  • Total Gate Charge (Qg@Vgs): 6nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AOU4S60

Full Specifications of AOU4S60

Model NumberAOU4S60
Model NameAlpha & Omega Semicon AOU4S60
CategoryMOSFETs
BrandAlpha & Omega Semicon
Description600V 4A 56.8W 900mΩ@2A,10V 4.1V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4A
Power Dissipation (Pd)56.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)900mΩ@2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)263pF@100V
Total Gate Charge (Qg@Vgs)6nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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