AOV11S60 by Alpha & Omega Semicon – Specifications

Alpha & Omega Semicon AOV11S60 is a AOV11S60 from Alpha & Omega Semicon, part of the MOSFETs. It is designed for 600V 500mΩ@3.8A,10V 4.1V@250uA 1PCSNChannel DFN-4-EP(8x8) MOSFETs ROHS. This product comes in a DFN-4-EP(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 650mA;8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 500mΩ@3.8A,10V
  • Power Dissipation (Pd): 8.3W;156W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 545pF@100V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on AOV11S60

Full Specifications of AOV11S60

Model NumberAOV11S60
Model NameAlpha & Omega Semicon AOV11S60
CategoryMOSFETs
BrandAlpha & Omega Semicon
Description600V 500mΩ@3.8A,10V 4.1V@250uA 1PCSNChannel DFN-4-EP(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-4-EP(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)650mA;8A
Drain Source On Resistance (RDS(on)@Vgs,Id)500mΩ@3.8A,10V
Power Dissipation (Pd)8.3W;156W
Gate Threshold Voltage (Vgs(th)@Id)4.1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)545pF@100V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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