ASDsemi ASDM20N12ZB-R is a ASDM20N12ZB-R from ASDsemi, part of the MOSFETs. It is designed for 20V 12A 11.5mΩ@4.5V,5A 1.14W 950mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 12A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11.5mΩ@4.5V,5A
- Power Dissipation (Pd): 1.14W
- Gate Threshold Voltage (Vgs(th)@Id): 950mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 150pF@20V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.035nF@20V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.
More on ASDM20N12ZB-R
Full Specifications of ASDM20N12ZB-R
Model Number | ASDM20N12ZB-R |
Model Name | ASDsemi ASDM20N12ZB-R |
Category | MOSFETs |
Brand | ASDsemi |
Description | 20V 12A 11.5mΩ@4.5V,5A 1.14W 950mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.040 grams / 0.001411 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 12A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 11.5mΩ@4.5V,5A |
Power Dissipation (Pd) | 1.14W |
Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 150pF@20V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.035nF@20V |
Total Gate Charge (Qg@Vgs) | - |
Operating Temperature | - |
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