CZT5551 TR by Central Semicon – Specifications

Central Semicon CZT5551 TR is a CZT5551 TR from Central Semicon, part of the Bipolar Transistors - BJT. It is designed for 160V 2W 80@10mA,5V 600mA NPN SOT-223-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
  • Transistor Type: NPN
  • Operating Temperature: -65℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.1 grams.

More on CZT5551 TR

Full Specifications of CZT5551 TR

Model NumberCZT5551 TR
Model NameCentral Semicon CZT5551 TR
CategoryBipolar Transistors - BJT
BrandCentral Semicon
Description160V 2W 80@10mA,5V 600mA NPN SOT-223-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.100 grams / 0.003527 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)2W
DC Current Gain (hFE@Ic,Vce)80@10mA,5V
Collector Current (Ic)600mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@50mA,5mA
Transistor TypeNPN
Operating Temperature-65℃~+150℃@(Tj)

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