BC858CW-G by Comchip – Specifications

Comchip BC858CW-G is a BC858CW-G from Comchip, part of the Bipolar Transistors - BJT. It is designed for 30V 150mW 420@2mA,5V 100mA PNP SOT-323 Bipolar Transistors - BJT ROHS. This product comes in a SOT-323 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 100MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@5mA,100mA
  • Operating Temperature: -65℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of BC858CW-G

Model NumberBC858CW-G
Model NameComchip BC858CW-G
CategoryBipolar Transistors - BJT
BrandComchip
Description30V 150mW 420@2mA,5V 100mA PNP SOT-323 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-323
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)420@2mA,5V
Collector Current (Ic)100mA
Transition Frequency (fT)100MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@5mA,100mA
Operating Temperature-65℃~+150℃@(Tj)

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