DI036N20PQ by (DIOTEC) – Specifications

(DIOTEC) DI036N20PQ is a DI036N20PQ from (DIOTEC), part of the MOSFETs. It is designed for 200V 36A 40mΩ@28A,10V 125W 4V@250uA 1PCSNChannel QFN-8(5x6) MOSFETs ROHS. This product comes in a QFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 36A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@28A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.27nF@30V
  • Total Gate Charge (Qg@Vgs): 145nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of DI036N20PQ

Model NumberDI036N20PQ
Model Name(DIOTEC) DI036N20PQ
CategoryMOSFETs
Brand(DIOTEC)
Description200V 36A 40mΩ@28A,10V 125W 4V@250uA 1PCSNChannel QFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)36A
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@28A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.27nF@30V
Total Gate Charge (Qg@Vgs)145nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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