2SB649A-C by Foshan Blue Rocket Elec – Specifications

Foshan Blue Rocket Elec 2SB649A-C is a 2SB649A-C from Foshan Blue Rocket Elec, part of the Bipolar Transistors - BJT. It is designed for 160V 1W 100@150mA,5V 1.5A PNP TO-126 Bipolar Transistors - BJT ROHS. This product comes in a TO-126 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,5V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 140MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@500mA,50mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.808 grams.

More on 2SB649A-C

Full Specifications of 2SB649A-C

Model Number2SB649A-C
Model NameFoshan Blue Rocket Elec 2SB649A-C
CategoryBipolar Transistors - BJT
BrandFoshan Blue Rocket Elec
Description160V 1W 100@150mA,5V 1.5A PNP TO-126 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.808 grams / 0.028501 oz
Package / CaseTO-126
Package / ArrangeBag-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)100@150mA,5V
Collector Current (Ic)1.5A
Transition Frequency (fT)140MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@500mA,50mA
Transistor TypePNP
Operating Temperature-

Compare Foshan Blue Rocket Elec - 2SB649A-C With Other 163 Models

Related Models - 2SB649A-C Alternative

Scroll to Top