FUXINSEMI BC857BDW is a BC857BDW from FUXINSEMI, part of the Bipolar Transistors - BJT. It is designed for 45V 300mW 400@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic,Vce): 400@2mA,5V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 200MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
- Operating Temperature: -55℃~+150℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.
More on BC857BDW
Full Specifications of BC857BDW
Model Number | BC857BDW |
Model Name | FUXINSEMI BC857BDW |
Category | Bipolar Transistors - BJT |
Brand | FUXINSEMI |
Description | 45V 300mW 400@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.032 grams / 0.001129 oz |
Package / Case | SOT-363 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Collector Cut-Off Current (Icbo) | 15nA |
Collector-Emitter Breakdown Voltage (Vceo) | 45V |
Power Dissipation (Pd) | 300mW |
DC Current Gain (hFE@Ic,Vce) | 400@2mA,5V |
Collector Current (Ic) | 200mA |
Transition Frequency (fT) | 200MHz |
Transistor Type | PNP |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@100mA,5mA |
Operating Temperature | -55℃~+150℃ |
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