BC857BDW by FUXINSEMI – Specifications

FUXINSEMI BC857BDW is a BC857BDW from FUXINSEMI, part of the Bipolar Transistors - BJT. It is designed for 45V 300mW 400@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 400@2mA,5V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 200MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Operating Temperature: -55℃~+150℃

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.

Full Specifications of BC857BDW

Model NumberBC857BDW
Model NameFUXINSEMI BC857BDW
CategoryBipolar Transistors - BJT
BrandFUXINSEMI
Description45V 300mW 400@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.032 grams / 0.001129 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)400@2mA,5V
Collector Current (Ic)200mA
Transition Frequency (fT)200MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@100mA,5mA
Operating Temperature-55℃~+150℃

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